GaN 射频功率晶体管

M/A-COM Technology Solutions offers a new family of Gallium Nitride (GaN) RF power transistors and pallets. This product family targets L- and S-Band pulsed radar applications and leverages M/A-COM Tech's rich heritage of providing both standard and custom solutions to meet the most demanding customer needs. Benefits of M/A-COM Tech’s GaN products include high breakdown voltage, superior power density, and higher and broader frequency operation than Silicon.

Key features of our GaN on Silicon Carbide (SiC) products include:

  Frequency (MHz)        
Part Number Min Max Pout (W) Pulse (?s) Duty (%) Gain (dB)
MAGX-000035-030000
GaN on SiC HEMT Power Transistor
1.00 3500.00 30.0   100 25.0
MAGX-000912-125L00
GaN on SiC HEMT Power Transistor
960.00 1215.00 125.0 2000 10 20.0
MAGX-000912-250L00
GaN on SiC HEMT Power Transistor
960.00 1215.00 250.0 128 10 19.0
MAGX-001214-125L00
GaN on SiC HEMT Power Transistor
1200.00 1400.00 125.0 300 10 19.0
MAGX-001214-250L00
GaN on SiC HEMT Power Transistor
1200.00 1400.00 250.0 2000 10 19.0
MAGX-001220-100L00
GaN on SiC HEMT Power Transistor
1200.00 2000.00 100.0 500 10 14.0
MAGX-002731-030L00
GaN on SiC HEMT Power Transistor
2700.00 3100.00 30.0 500 10 11.0
MAGX-002731-100L00
GaN on SiC HEMT Power Transistor
2700.00 3100.00 100.0 500 10 12.0
MAGX-002731-180L00
GaN on SiC HEMT Power Transistor
2700.00 3100.00 180.0 300 10 11.0
MAGX-002735-040L00
GaN on SiC HEMT Pulsed Power Transistor
2700.00 3500.00 40.0 300 10 10.5
MAGX-003135-030L00
GaN on SiC HEMT Power Transistor
3100.00 3500.00 30.0 500 10 11.0
MAGX-003135-120L00
GaN HEMT Pulsed Power Transsitor
3100.00 3500.00 120.0 300 10 11.8
MAGX-003135-180L00
GaN on SiC HEMT Power Transistor
3100.00 3500.00 180.0 300 10 11.0
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