INA217:用于替换 SSM2017 的低噪声低失真仪表放大器

The INA217 device is a low-noise, low-distortion, monolithic instrumentation amplifier. Current-feedback circuitry allows the INA217 device to achieve wide bandwidth and excellent dynamic response over a wide range of gain. The INA217 device is ideal for low-level audio signals such as balanced low-impedance microphones. Many industrial, instrumentation, and medical applications also benefit from its low noise and wide bandwidth.

Unique distortion cancellation circuitry reduces distortion to extremely low levels, even in high gain. The INA217 device provides near-theoretical noise performance for 200-Ω source impedance. The INA217 device features differential input, low noise, and low distortion that provides superior performance in professional microphone amplifier applications.

The INA217device features wide supply voltage, excellent output voltage swing, and high output current drive, making it an optimal candidate for use in high-level audio stages.

The INA217 device is available in the same DIP-8 and SOL-16 wide body packages and pinouts as the SSM2017. For a smaller package, see the INA163 device in SO-14 narrow. The INA217 device is specified over the temperature range of –40°C to 85°C.

  • Low Noise: 1.3 nV/?√Hz at 1 kHz
  • Low THD+N: 0.004% at 1 kHz, G = 100
  • Wide Bandwidth: 800 kHz at G = 100
  • Wide Supply Range: ±4.5 V to ±18 V
  • High CMR: > 100 dB
  • Gain Set With External Resistor
  • DIP-8 and SOL-16 Widebody Packages
Number of Channels (#)1
Vs (Min) (V)9
Vs (Max) (V)36
CMRR (Min) (dB)100
Input Offset (+/-) (Max) (uV)250
Input Offset Drift (+/-) (Max) (uV/C)1
Input Bias Current (+/-) (Max) (nA)12000
Noise at 1kHz (Typ) (nV/rt(Hz))1.3
Iq (Typ) (mA)10
Bandwidth at Min Gain (Typ) (MHz)3.4
Gain (Min) (V/V)1
Gain (Max) (V/V)10000
Gain Error (+/-) (Max) (%)0.7
Operating Temperature Range (C)-40 to 125 -40 to 85
Package GroupPDIP SOIC
Approx. Price (US$)2.80 | 1ku
Package Size: mm2:W x L (PKG)See datasheet (PDIP)
Noise at 0.1 Hz - 10 Hz (Typ) (uVpp)2
Gain Non-Linearity (+/-) (Max) (%)0.0006
标题类型大小 (KB)日期
INA217 Low-Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017PDF9602015年 4月 8日
标题类型大小 (KB)日期
所选封装材料的热学和电学性质PDF6452008年 10月 16日
标题类型大小 (KB)日期
模拟信号链路产品指南 (Rev. B)PDF55182013年 9月 3日
基于 SPICE 的模拟仿真程序TINA-TI电路设计和仿真
型号试生产 / 生产材料状态温度(oC)价格(美金) | Quantity封装 | 引脚器件标记封装数量 | 载体
INA217AIDWR生产ACTIVE-40 to 1252.80 | 1kuSOIC?(DW)INA2172000 | LARGE T&R
INA217AIDWT生产ACTIVE-40 to 1253.19 | 1kuSOIC?(DW)INA217250 | SMALL T&R
INA217AIDWTE4生产ACTIVE-40 to 1253.19 | 1kuSOIC?(DW)INA217250 | SMALL T&R
INA217AIP生产ACTIVE-40 to 853.19 | 1kuPDIP?(P)INA21750 | TUBE
INA217AIPG4生产ACTIVE-40 to 853.19 | 1kuPDIP?(P)INA21750 | TUBE
INA217 Low-Noise, Low-Distortion Instrumentation Amplifier Replacement for SSM2017 INA217
所选封装材料的热学和电学性质 DCP010505B
模拟信号链路产品指南 (Rev. B) BQ24392
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